Abstract Effect of in-/ex-situ annealing on the structure, optical, photoluminescence, electrical characterization and gas sensing dynamics on CdS thin films are presented. Raman characterizations showed an increase in the peak intensity with increasing the annealing temperature under ex-situ, while a lower peak intensity observed through the in-situ annealing condition. No shift was observed in the Photoluminescence peaks through the yellow band peaks of in-situ annealed samples, however, a slightly blue shift was observed through the ex-situ annealed samples. High conductivity was observed for all samples, while in the case of in-situ RT, in-situ 100 °C, ex-situ 200 °C and ex-situ 300 °C, a CO2 and O2 gas sensing activity have been tested. The ex-situ 300 °C sample shows a higher response towards CO2 compared with the ex-situ 200 °C film. While, both in-situ RT and 100 °C sensors show the same response towards CO2 with a high gas response. However, the in-situ 100 °C sensor has the highest response compared to in-situ RT film with a high response of 25% at 50 sccm towards O2.

中文翻译：

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原位/异位退火温度对 CdS 纳米结构薄膜的光学、结构和气敏动力学的影响

摘要 介绍了原位/异位退火对 CdS 薄膜的结构、光学、光致发光、电学特性和气敏动力学的影响。拉曼表征表明，在非原位退火温度升高时，峰强度增加，而在原位退火条件下观察到的峰强度较低。通过原位退火样品的黄色带峰没有观察到光致发光峰的位移，但是，通过非原位退火样品观察到轻微的蓝移。所有样品均观察到高电导率，而在原位 RT、原位 100 °C、异位 200 °C 和异位 300 °C 的情况下，已经测试了 CO2 和 O2 气体传感活动。与异位 200 °C 薄膜相比，异位 300 °C 样品对 CO2 显示出更高的响应。尽管，原位 RT 和 100 °C 传感器对 CO2 具有相同的响应，具有高气体响应。然而，与原位 RT 薄膜相比，原位 100 °C 传感器具有最高的响应，在 50 sccm 对 O2 时具有 25% 的高响应。