This article presents a novel pico-watt voltage reference (VR) circuit whose power consumption is well controlled at high temperature. Unlike a traditional pico-watt VR circuit whose power consumption increases exponentially with temperature, the power consumption in this article increases linearly with temperature, thus saving much energy at high temperature. It generates the reference voltage through a 2-transistor (2-T) structure and a current generator to well control the current versus temperature. In the current generator, a gate leakage transistor replaces a huge resistor, thus saving 4-mm² area. Fabricated in a 0.13- $\mu \text{m}$ CMOS process, this VR circuit generates a reference voltage of about 560 mV and shows an average temperature coefficient (TC) of 18.4 ppm/°C after trimming across −25 °C to 85 °C and a line sensitivity (LS) of 0.15%/V, while consuming 20 pW at 1-V ${V} _{\text {DD}}$ and 27 °C. The power consumption at 3.3-V ${V} _{\text {DD}}$ and 85 °C is 114 pW, which is at least two times smaller than reported in state-of-the-art work at high temperature. The core area is 0.003 mm².

中文翻译：

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具有线性温度相关功耗的参考电压

本文介绍了一种新型皮瓦电压基准 (VR) 电路，其功耗在高温下得到很好的控制。与传统的皮瓦VR电路的功耗随温度呈指数增长不同，本文中的功耗随温度呈线性增长，从而在高温下节省了大量能源。它通过一个 2 晶体管 (2-T) 结构和一个电流发生器产生参考电压，以很好地控制电流与温度的关系。在电流发生器中，栅极泄漏晶体管取代了一个巨大的电阻器，从而节省了 4mm ^{2 的}面积。在 0.13- $\mu \text{m}$ 该 VR 电路采用 CMOS 工艺，可产生约 560 mV 的参考电压，在 -25 °C 至 85 °C 之间进行微调后，平均温度系数 (TC) 为 18.4 ppm/°C，线路灵敏度 (LS) 为 0.15% /V，同时在 1-V 下消耗 20 pW ${V} _{\text {DD}}$ 和 27°C。3.3V 时的功耗 ${V} _{\text {DD}}$ 85 °C 为 114 pW，至少比高温下最新工作报告的小两倍。核心面积为0.003 mm ²。