Abstract To meet the growing need of e-beam lithography resists with high resolution as well as high etch durability in plasma, a new resist, RE-650 had been developed in our earlier work. This paper reports our comprehensive tests of RE-650, regarding its e-beam lithogrpahy performance, dry-etch property and nanofabrication capability. Evaluations of minimum widths of lines and/or trenches, dense gatings, dry etch speed in fluorine based plasma and lift off performance in nanofabrications of T shape gates were carried out. In all these tests, RE-650 has demonstrated impressive performance, especially its high resistivity to the plasma etching, meeting the needs in nanoprocess for nanostrctures and nanodevices. Because of this, RE-650 should find broad applications for nanofabrications after being scaled up.

中文翻译：

---

评估 RE-650 作为具有高等离子体蚀刻耐久性的电子束光刻正性抗蚀剂

摘要 为了满足对高分辨率电子束光刻抗蚀剂以及在等离子体中高耐蚀性的日益增长的需求，我们在早期的工作中开发了一种新的抗蚀剂 RE-650。本文报告了我们对 RE-650 的综合测试，涉及其电子束光刻性能、干蚀刻性能和纳米加工能力。对线和/或沟槽的最小宽度、密集浇口、氟基等离子体中的干蚀刻速度和 T 形栅极纳米制造中的剥离性能进行了评估。在所有这些测试中，RE-650 展示了令人印象深刻的性能，尤其是其对等离子体蚀刻的高电阻率，满足了纳米结构和纳米器件的纳米工艺需求。正因为如此，RE-650 在放大后应该会在纳米加工中找到广泛的应用。