In this paper, the crosstalk effects in multilayer graphene nanoribbon (MLGNR) interconnects are evaluated and are compared with those in multiwalled carbon nanotube (MWCNT) interconnects in ternary integrated circuits at the 10 and 7 nm technologies. For a more precise evaluation, the five-line bus architecture is considered. Furthermore, the effects of the top and bottom aggressors are considered for a more accurate analysis in sub-10 nm dimensions. The active and passive shielding techniques are also applied to reduce the crosstalk effects. Our results indicate that the MLGNR interconnects outperform the MWCNTs, especially in the more realistic seven-line case, which also considers the effects of the bottom and top layer aggressors. Also, the advantages of the MLGNR interconnects become more significant when the node shrinks from 10 to 7 nm. The crosstalk delays of normal, passively shielded, and actively shielded five-line MLGNRs at 7 nm are on average 49%, 56%, and 54% lower compared to their MWCNT counterparts, respectively. These improvements are 36%, 36%, and 41% regarding the power. Moreover, the normal and actively shielded MLGNRs have 25% and 72% smaller crosstalk noise area than their MWCNT counterparts, respectively. The smaller crosstalk noise for MLGNR leads to noise-free signals at the end of both actively and passively shielded victim lines in ternary logic at the 10 and 7 nm technologies.

中文翻译：

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亚 10 纳米技术中多层石墨烯纳米带和 MWCNT 互连中串扰效应的比较分析

在本文中，评估了多层石墨烯纳米带 (MLGNR) 互连中的串扰效应，并将其与 10 和 7 nm 技术的三元集成电路中的多壁碳纳米管 (MWCNT) 互连中的串扰效应进行了比较。为了更精确的评估，我们考虑了五线总线架构。此外，还考虑了顶部和底部侵略者的影响，以便在亚 10 nm 维度进行更准确的分析。主动和被动屏蔽技术也用于减少串扰效应。我们的结果表明 MLGNR 互连优于 MWCNT，尤其是在更现实的七线情况下，这也考虑了底层和顶层攻击者的影响。此外，当节点从 10 nm 缩小到 7 nm 时，MLGNR 互连的优势变得更加显着。与对应的 MWCNT 相比，正常、被动屏蔽和主动屏蔽的 7 nm 五线 MLGNR 的串扰延迟分别平均低 49%、56% 和 54%。这些改进在功率方面分别是 36%、36% 和 41%。此外，正常和有源屏蔽 MLGNR 的串扰噪声区域分别比 MWCNT 对应物小 25% 和 72%。MLGNR 较小的串扰噪声会在 10 和 7 纳米技术的三元逻辑中在主动和被动屏蔽的受害线末端产生无噪声信号。正常和有源屏蔽 MLGNR 的串扰噪声区域分别比 MWCNT 对应物小 25% 和 72%。MLGNR 较小的串扰噪声会在 10 和 7 纳米技术的三元逻辑中在主动和被动屏蔽的受害线末端产生无噪声信号。正常和有源屏蔽 MLGNR 的串扰噪声区域分别比 MWCNT 对应物小 25% 和 72%。MLGNR 较小的串扰噪声会在 10 和 7 纳米技术的三元逻辑中在主动和被动屏蔽的受害线末端产生无噪声信号。