A 60–113 GHz down-conversion mixer in 90 nm CMOS is demonstrated. The mixer adopts an RL core IF load, which is based on the series of a peaking inductor (L) and a parallel combination of the cross-coupled PMOS transistors (CCPT) and the diode-connected NMOS transistors (DCNT), i.e. L-CCPT–DCNT-based core IF load. Conversion gain (CG) can be significantly enhanced due to the increase of load impedance. The bandwidth can be improved due to the inductive peaking effect of the RL core IF load. The mixer consumes 3.2 mW and achieves RF-port input reflection coefficient of − 10 to − 31.2 dB for 82.8–97.2 GHz. The mixer attains CG of 16.8 ± 1.5 dB for 60–113 GHz. The corresponding 3 dB CG bandwidth is 53 GHz. Moreover, for 70–100 GHz, the mixer achieves CG of 17.4–18.3 dB and LO-RF isolation of 39.2–54.4 dB, one of the best CG and LO-RF isolation results ever reported for down-conversion mixers around 77 GHz or 94 GHz. These prominent results indicate that the down-conversion mixer is suitable for 77 GHz automobile radar and 94 GHz imaging radar systems.

演示了在90 nm CMOS中的60–113 GHz下变频混频器。混频器采用RL核心IF负载，该负载基于峰值电感器（L）的串联以及交叉耦合的PMOS晶体管（CCPT）和二极管连接的NMOS晶体管（DCNT）的并联组合，即L-基于CCPT–DCNT的核心IF负载。由于负载阻抗的增加，转换增益（CG）可以大大提高。由于RL核心IF负载的电感峰值效应，可以提高带宽。混频器功耗为3.2 mW，在82.8–97.2 GHz时，RF端口输入反射系数为− 10至− 31.2 dB。在60–113 GHz的频率范围内，混频器的CG为16.8±1.5 dB。相应的3 dB CG带宽为53 GHz。而且，对于70–100 GHz，混频器的CG达到17.4–18.3 dB，LO-RF隔离达到39.2–54.4 dB，对于77 GHz或94 GHz左右的下变频混频器，有史以来最好的CG和LO-RF隔离结果之一。这些突出的结果表明，下变频混频器适用于77 GHz汽车雷达和94 GHz成像雷达系统。