Compared to analogous bulk materials, colloidal nanocrystals have presented a powerful platform for building up electronic devices on the nano/micrometer scale and flexible portable electronic apparatus with the benefits of solution‐based processing approach at room temperature. Herein, memristors based on CuInSe₂ (CISe) colloidal nanocrystals prepared using a solution‐based process at room temperature are constructed. The memristors exhibit obvious bipolar resistive switching performance with a high–low resistance ratio larger than 5.7 and a steady retention time over 10⁴ s. This is attributed to the copper ion redox reaction and the migration of these ions under an applied electric field. When the SET voltage is reached, the ions are separated from one of the electrodes, and the memristor changes from a low‐resistance state (LRS) to a high‐resistance state (HRS). Conversely, when the voltage reaches the RESET voltage, the memristor switches from a HRS to a LRS. In addition, the flexible memristor can be fabricated by spincoating nanocrystal solution onto polyethylene terephthalate (PET) at room temperature, showing excellent reproducibility of the performance including 100 times of continuous operation, 10⁴ s of reproducible reading, 600 times of antifatigue testing, and thermal stability up to 95 °C. The flexible devices demonstrate promising applications for portable electronic devices.

中文翻译：

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基于溶液处理的胶体CuInSe2纳米晶体开发柔性忆阻器

与类似的块状材料相比，胶体纳米晶体提供了一个强大的平台，可在室温下以溶液为基础的处理方法来构建纳米/微米规模的电子设备和灵活的便携式电子设备。在此，构造了基于CuInSe ₂（CISe）胶体纳米晶体的忆阻器，该忆阻器是在室温下使用基于溶液的方法制备的。忆阻器具有明显的双极电阻切换性能，高/低电阻比大于5.7，并且保持时间稳定在10 ^4以上s。这归因于铜离子氧化还原反应以及这些离子在施加电场下的迁移。当达到SET电压时，离子与其中一个电极分离，忆阻器从低电阻状态（LRS）变为高电阻状态（HRS）。相反，当电压达到RESET电压时，忆阻器从HRS切换到LRS。另外，可以通过在室温下将纳米晶体溶液旋涂到聚对苯二甲酸乙二醇酯（PET）上来制造柔性忆阻器，该性能表现出出色的可重复性，包括连续运行100次，10 ⁴可再现的读数，600倍的抗疲劳测试和高达95°C的热稳定性。柔性设备展示了便携式电子设备的有前途的应用。