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Nonvolatile Programmable WSe2 Photodetector
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2020-04-13 , DOI: 10.1002/adom.202000417
Aday J. Molina‐Mendoza 1 , Matthias Paur 1 , Thomas Mueller 1
Affiliation  

Optoelectronic devices with nonvolatile memory are an important component in a wide variety of applications ranging from optoelectronic random‐access‐memories, with the advantage of using optical stimuli as an added parameter, to complex artificial neuromorphic networks that pretend to mimic the working schemes of the human brain. In the past few years, 2D materials have been proposed as attractive candidates to build such optoelectronic devices with memory due to their excellent optoelectronic properties and high sensitivity to external electric fields. Here, a WSe2 monolayer p–n junction working as a nonvolatile programmable photodetector is reported, that, enabled by a split‐gate configuration with embedded charge‐trapping layers, is capable of retaining custom responsivity values over time, prior configuration by the user. Once configured, this photodetector can operate without external applied bias voltage as a self‐driven photodetector, as well as without external back‐gate voltage thanks to the charge stored in the floating gates. Furthermore, the device shows a remarkable performance, with open‐circuit voltage around 1 V at approximately 270 W m−2 white light, fill factor higher than 30%, and fast response times. This programmable photodetector sets a new concept as a building block in more complex image‐sensing systems.

中文翻译:

非易失性可编程WSe2光电探测器

具有非易失性存储器的光电设备是从光电随机存取存储器(利用光刺激作为附加参数的优势)到假装模仿神经网络工作方案的复杂人工神经形态网络等各种应用中的重要组件。人脑。在过去的几年中,由于二维材料具有出色的光电性能和对外部电场的高灵敏度,因此已被提议作为有吸引力的候选材料来构建具有存储器的光电器件。在这里,WSe 2据报道,单层PN结用作非易失性可编程光电探测器,通过具有嵌入式电荷陷获层的分栅配置实现,能够随时间保留用户自定义的响应度值,这是用户事先配置的。配置完成后,由于浮栅中存储的电荷,该光电检测器可以在没有外部施加偏置电压的情况下作为自驱动光电检测器运行,也可以在没有外部背栅电压的情况下运行。此外,该器件还具有出色的性能,在约270 W m -2的白光下开路电压约为1 V ,填充系数高于30%,响应时间短。这种可编程的光电探测器在更复杂的图像传感系统中树立了新的基础。
更新日期:2020-06-19
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