This letter deals with the compact modeling of the I-V characteristics of single crystalline ZnO nanowires (NW) attached to two metal electrodes (Pt and Ag). Starting from the standard model of electron transport in these structures based on the series combination of two back-to-back Schottky diodes, three different approaches which account for the role played by the NW series resistance are presented. The first approach considers a fixed potential drop across the NW, the second one involves the solution to the problem of a diode with linear and nonlinear series resistances using the Lambert W function, and the third one consists in a behavioral model with continuous first derivative suitable for circuit simulation environments. In the three cases, the proposed solutions are consistent with the observed electrical constraints both at low (linear I-V relationship) and high (current saturation) voltages.

中文翻译：

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包含非线性串联电阻效应的 ZnO 纳米线 IV 特性的紧凑建模

这封信涉及连接到两个金属电极（Pt 和 Ag）的单晶 ZnO 纳米线 (NW) 的 IV 特性的紧凑建模。从基于两个背对背肖特基二极管串联组合的这些结构中电子传输的标准模型开始，提出了三种不同的方法来解释 NW 串联电阻所起的作用。第一种方法考虑了 NW 上的固定电位降，第二种方法涉及使用 Lambert W 函数解决具有线性和非线性串联电阻的二极管问题，第三种方法包括具有连续一阶导数的行为模型，适用于用于电路仿真环境。在这三种情况下，