AlGaAs bulk electro-optic Mach–Zehnder modulators with low ${V_\pi }$ are reported. Epilayer design is an npin, which is shown to be equivalent to a pin. Measured ${V_\pi }$ is 1 V for 1 cm long electrode and this result agrees very well with the numerical modeling. Modulator capacitance remains constant and current through the device is negligible over a wide bias range. Lowest bandgap of the material in the active waveguide region is larger than twice the photon energy at 1550 nm, significantly reducing material absorption, including two-photon absorption. Modulator characteristics remain unchanged under coupled input optical powers approaching 160 mW. Low ${V_\pi }$ combined with high optical power handling capability make these devices suitable for analog photonic links.

中文翻译：

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具有低电压、高光功率处理能力的 1550 nm 块状化合物半导体电光调制器

AlGaAs 体电光 Mach-Zehnder 调制器 ${V_\pi }$被报道。外延层设计是一个输入，这被证明等价于 别针. 实测${V_\pi }$对于 1 cm 长的电极，电压为 1 V，该结果与数值模型非常吻合。调制器电容保持恒定，通过器件的电流在很宽的偏置范围内可以忽略不计。有源波导区材料的最低带隙大于 1550 nm 光子能量的两倍，显着降低了材料吸收，包括双光子吸收。在耦合输入光功率接近 160 mW 时，调制器特性保持不变。低的${V_\pi }$ 结合高光功率处理能力，使这些器件适用于模拟光子链路。