This article presents a numerical model dedicated to the simulation of field ion microscopy (FIM). FIM was the first technique to image individual atoms on the surface of a material. By a careful control of the field evaporation of the atoms from the surface, the bulk of the material exposed, and, through a digitally processing a sequence of micrographs, a three-dimensional reconstruction can be achieved. 3DFIM is particularly suited to the direct observation of crystalline defects such as vacancies, interstitials, vacancy clusters, dislocations, and any combinations of theses defects that underpin the physical properties of materials. This makes 3DFIM extremely valuable for many material science and engineering applications, and further developing this technique is becoming crucial. The proposed model enables the simulation of imaging artefacts that are induced by non-regular field evaporation and by the impact of the perturbation of the electric field distribution of the distorted distribution of atoms close to defects. The model combines the meshless algorithm for field evaporation proposed by Rolland et al. (Robin-Rolland Model, or RRM) with fundamental aspects of the field ionization process of the gas image involved in FIM.

中文翻译：

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三维场离子显微镜成像预测模型

本文介绍了一个专门用于模拟场离子显微镜 (FIM) 的数值模型。FIM 是第一种在材料表面对单个原子进行成像的技术。通过仔细控制原子从表面的场蒸发、暴露的大部分材料，以及通过数字处理一系列显微照片，可以实现三维重建。3DFIM 特别适用于直接观察晶体缺陷，例如空位、间隙、空位簇、位错以及这些缺陷的任何组合，这些缺陷是材料物理特性的基础。这使得 3DFIM 对于许多材料科学和工程应用非常有价值，进一步开发这种技术变得至关重要。所提出的模型能够模拟由非规则场蒸发和靠近缺陷的原子的扭曲分布的电场分布的扰动影响引起的成像伪影。该模型结合了 Rolland 等人提出的场蒸发无网格算法。（Robin-Rolland 模型，或 RRM）与 FIM 中涉及的气体图像的场电离过程的基本方面。