Abstract An analytic approach has been carried out to calculate the lattice resistance for movement of a straight dislocation in the crystal lattice at a velocity corresponding to common tensile test, which provides a different method from the classic Peierls-Nabarro (P–N) model. In the present model, movement of dislocation is supposed to consist of oscillation at equilibrium sites and instantaneous jumping from an equilibrium site to the next equilibrium site. Resistance of dislocation movement is derived from the displacement of dislocation to its own stress field core during jumping. Estimated values of the resistances in the present model are in accordance with the experimental results of Cu and Al, which are obviously lower than the results of existing models. Meanwhile, the applicative condition of the present model has been discussed.

中文翻译：

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通过位错从其自身应力场核心的位移推导出直线位错运动的晶格电阻

摘要 已经进行了一种解析方法来计算晶格中直线位错以对应于普通拉伸试验的速度运动的晶格阻力，这提供了一种不同于经典 Peierls-Nabarro (P-N) 模型的方法。在目前的模型中，位错的运动应该包括平衡点的振荡和从一个平衡点到下一个平衡点的瞬时跳跃。位错运动的阻力来源于跳跃时位错对其自身应力场核的位移。本模型的电阻估计值与Cu和Al的实验结果一致，明显低于现有模型的结果。同时，讨论了本模型的适用条件。