Abstract- In present-day technology, a bilayer graphene field-effect transistor (BLGNRFET) is known as a suitable alternative for continuing the scaling trend of transistor dimensions. This paper proposes an electrically embedded source-side gate BLGNRFET (EESG-BLGNRFET) in which an appropriate gate engineering takes into account near the source extension. In the proposed structure, this induces a vertical electric field and a larger bandgap in the vicinity of the source for low gate biases reducing off current. The EESG-BLGNRFET benefits from several analog and digital metrics. Intrinsic gain and cut-off frequency 84% and 44% are respectively improved in the EESG-BLGNRFET. Furthermore, the delay and power-delay product (PDP) of the proposed structure are lower than those of the conventional counterpart. It is shown that drain-induced barrier lowing (DIBL) in the EESG-BLGNRFET is decreased that makes the device less sensitive to short-channel effects.

中文翻译：

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具有电嵌入源极侧栅极的双层石墨烯纳米带场效应晶体管

摘要 - 在当今的技术中，双层石墨烯场效应晶体管（BLGNRFET）被认为是延续晶体管尺寸缩放趋势的合适替代品。本文提出了一种电嵌入式源极侧栅极 BLGNRFET (EESG-BLGNRFET)，其中适当的栅极工程考虑了源极扩展附近。在所提出的结构中，这会在源极附近感应出垂直电场和更大的带隙，以减少关断电流。EESG-BLGNRFET 受益于多个模拟和数字指标。EESG-BLGNRFET 的固有增益和截止频率分别提高了 84% 和 44%。此外，所提出结构的延迟和功率延迟积（PDP）低于传统对应结构的延迟和功率延迟积（PDP）。