To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device’s breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper. The Effective Substrate Voltage (ESV) concept is proposed so that the derivation of electric field and breakdown voltage can be simplified significantly. The ESV indicates that the influence of 2-D doping in the drift region can be equivalent to a virtual substrate potential. By using the proposed model, the role of 2-D drift doping, both continuous or discrete doping profile, in SOI LDMOSs’ off-state breakdown behavior is investigated along with the TCAD simulations and experimental results. The good agreement between the analytical, measured and simulated results validates the accuracy of the developed model. A unified RESURF criterion is derived to idealize the electric field in the drift region and therefore maximize the breakdown voltage by optimizing the lateral and vertical drift doping profiles and geometric parameters. The proposed approach provides a universally applicable tool to explore the breakdown mechanism of SOI LDMOS with various drift doping profiles.

中文翻译：

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基于有效衬底电压法的具有任意漂移掺杂分布的 SOI LDMOS 分析击穿模型

为了详细说明漂移区的复杂二维掺杂分布与器件击穿行为之间的关系，本文开发了 SOI LDMOS 的统一分析模型。提出了有效衬底电压 (ESV) 概念，以便可以显着简化电场和击穿电压的推导。ESV 表明漂移区中二维掺杂的影响可以等效于虚拟衬底电位。通过使用所提出的模型，与 TCAD 模拟和实验结果一起研究了二维漂移掺杂（连续或离散掺杂分布）在 SOI LDMOS 断态击穿行为中的作用。分析、测量和模拟结果之间的良好一致性验证了开发模型的准确性。推导出统一的 RESURF 标准来理想化漂移区中的电场，从而通过优化横向和垂直漂移掺杂分布和几何参数来最大化击穿电压。所提出的方法提供了一种普遍适用的工具来探索具有各种漂移掺杂分布的 SOI LDMOS 的击穿机制。