This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first after a sequence of program/verify and a idle retention phase. The phenomenon, hereafter called Temporary Read Errors (TRE), is not due to a permanent change of cell threshold voltage between the program verify and the following read operations, but to its transient instability occurring during the idle phase and the first read operations performed on a block. The experimental analysis has been performed on off-the-shelf gigabit-array products to characterize the dependence on the memory operating conditions. The TRE is found to be strongly dependent on the page read, on the read temperature and on the time delay between the first and the second read after the idle state. To emphasize its negative impact at system-level, we have evaluated the induced performance drop on Solid State Drives architectures.

中文翻译：

---

从空闲状态退出的 TLC 3D-NAND 闪存中的临时读取错误的第一个证据

本文提出了一种新的可靠性威胁，当执行从空闲状态退出的读取操作时，它会影响 3D-NAND 闪存。特别是，在一系列编程/验证和空闲保留阶段之后，首先读取的层报告了故障位计数的暂时大量增加。这种现象，以下称为临时读取错误 (TRE)，不是由于编程验证和后续读取操作之间单元阈值电压的永久变化，而是由于其在空闲阶段和在其上执行的第一次读取操作期间发生的瞬态不稳定性。一个块。已对现成的千兆位阵列产品进行了实验分析，以表征对存储器操作条件的依赖性。发现 TRE 强烈依赖于页面读取，关于读取温度以及空闲状态后第一次和第二次读取之间的时间延迟。为了强调其在系统级的负面影响，我们评估了固态驱动器架构上引起的性能下降。