To move towards a new generation powerful computing system, brain-inspired neuromorphic computing is expected to transform the architecture of the conventional computer, where memristors are considered to be potential solutions for synapses part. We propose and demonstrate a novel approach to achieve remarkable improvement of analog switching linearity in TaN/Ta/TaO_x/Al₂O₃/Pt/Si memristors by varying Al₂O₃ layer thickness. Presence of the Al₂O₃ layer is confirmed from the Auger Electron Spectroscopy study. Good analog switching ratio of about $100\times $ and superior switching uniformity are observed for the 1 nm Al₂O₃ based device. Multilevel capability of the memristive devices is also explored for prospective use as a synapse. More than 10⁴ and $4\times 10^{4}$ cycles nondegradable dc and ac endurances, respectively, alongwith 10⁴ second retention are achieved for the optimized device. Improved linearities of 2.41 and −2.77 for potentiation and depression, respectively are obtained for such 1 nm Al₂O₃-based devices. The property of gradual resistance changed by pulse amplitudes confirms that the TaO_x memristors can be potentially used as an electronic synapse.

中文翻译：

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使用扩散限制层进行突触学习，增强 TaOx 忆阻器的开关特性

为了迈向新一代强大的计算系统，受脑启发的神经形态计算有望改变传统计算机的架构，其中忆阻器被认为是突触部分的潜在解决方案。我们提出并展示了一种通过改变 Al ₂ O ₃层厚度显着改善 TaN/Ta/TaO _x /Al ₂ O ₃ /Pt/Si 忆阻器中模拟开关线性度的新方法。俄歇电子能谱研究证实了 Al ₂ O ₃层的存在。良好的模拟开关比约为 $100\次 $ 对于基于 1 nm Al ₂ O ₃的器件，观察到了优异的开关均匀性。还探索了忆阻装置的多级能力，以作为突触的预期用途。超过 10 ⁴和 $4\乘以 10^{4}$ 循环不可降解的直流和交流耐力，以及 10 ⁴秒的保持时间分别为优化的设备实现。对于这种基于1 nm Al ₂ O ₃的器件，增强和抑制的线性度分别提高了 2.41 和 -2.77 。由脉冲幅度改变的逐渐电阻的特性证实了 TaO _x忆阻器可以潜在地用作电子突触。