N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm $^{-2}$ . Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of $6\times8 \mu {\text {m}}^2$ shows a dc gain of 55 at a collector current of $I_{c}$ = 4 mA, with high collector-emitter breakdown voltage of ~17 V. The high-frequency response with cutoff frequency ( $f_{T}$ T) of 23 GHz and maximum available frequency ( $f_{\text {max}}$ T) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications.

中文翻译：

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在 200 mm Ge/Si 晶片上外延生长的 InGaP/GaAs 双异质结双极晶体管的高频特性

Npn InGaP/GaAs 双异质结双极晶体管已成功生长在 200 mm Ge/Si 晶片上，使用金属有机化学气相沉积技术，缺陷密度低至 107 cm $^{-2}$ . Ni/Ge/Al 和 Ti/Al 的非金金属用于形成小件器件制造的欧姆接触。测量了器件的直流 (dc) 和高频特性。发射区为 $6\times8 \mu {\text {m}}^2$ 显示在集电极电流为 55 的直流增益 $I_{c}$ = 4 mA，集电极-发射极击穿电压高达~17 V。截止频率的高频响应（ $f_{T}$ T) 23 GHz 和最大可用频率 ( $f_{\text {max}}$ 可以实现 10 GHz 的 T)。这些结果表明，在低缺陷密度 Ge/Si 晶片上生长的 InGaP/GaAs 双异质结双极晶体管具有实现 III-V CMOS 集成平台的潜力，用于高频应用。