The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN. It is essential to understand the BC MOSFETs noise mechanism based on trap parameters with different transistor biasing conditions. In this paper, we have designed and fabricated deep BC MOSFETs in a CIS-compatible process with 5 V rating. The ${1}/{f^{\gamma }}$ LFN is found due to non-uniform space and energy distributed oxide traps. To comprehensively explain the BC MOSFETs noise spectrum, we developed a LFN model based on the Shockley–Read–Hall (SRH) theory with WKB tunneling approximation. This is the first time that the ${ 1}/{f^{\gamma }}$ LFN spectrum of BC MOSFET has been numerically analyzed and modeled. The Random Telegraph Signal (RTS) amplitudes of each oxide traps are extracted efficiently with an Impedance Field Method (IFM). Our new model counts the noise contribution from each discretized oxide trap in oxide mesh grids. Experiments verify that the new model matches well the noise power spectrum from 10 to 10k Hz with various gate biasing conditions from accumulation to weak inversion.

中文翻译：

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埋沟道 MOSFET 的 1/fγ 低频噪声模型

MOSFET 中的低频噪声 (LFN) 对要求信噪比 (SNR) 的电路至关重要。埋沟道 (BC) MOSFET 通常用作 CCD 的源极跟随器晶体管和用于较低 LFN 的 CMOS 图像传感器 (CIS)。了解基于不同晶体管偏置条件的陷阱参数的 BC MOSFET 噪声机制至关重要。在本文中，我们采用 CIS 兼容工艺设计并制造了 5 V 额定电压的深 BC MOSFET。这 ${1}/{f^{\gamma }}$ 由于非均匀空间和能量分布的氧化物陷阱，发现了 LFN。为了全面解释 BC MOSFET 的噪声频谱，我们开发了一个基于肖克利-读-霍尔 (SRH) 理论和 WKB 隧道近似的 LFN 模型。这是第一次 ${ 1}/{f^{\gamma }}$ BC MOSFET 的 LFN 频谱已被数值分析和建模。每个氧化物陷阱的随机电报信号 (RTS) 振幅都使用阻抗场方法 (IFM) 有效提取。我们的新模型计算氧化物网格中每个离散氧化物陷阱的噪声贡献。实验验证了新模型与从累积到弱反演的各种门偏置条件下从 10 到 10k Hz 的噪声功率谱很好地匹配。