We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( ${\Delta }$ ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology.

中文翻译：

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具有制造友好型 8 英寸晶圆级均匀性的自旋轨道扭矩 MRAM 的尺寸相关切换特性

我们在 CMOS 兼容的 8 英寸晶圆厂工艺中开发了一种制造友好的自旋轨道扭矩磁随机存取存储器 (SOT-MRAM) 技术。所提出的 SOT-MRAM 工艺技术解决了蚀刻不均匀性和降低高电阻率重金属纳米线电阻的问题。此外，我们在所提出的 SOT-MRAM 单元结构中提出了与器件尺寸相关的开关电流阈值。为了实现我们制造的 SOT-MRAM 的潜力，已经全面研究了晶圆级均匀性、循环和温度依赖性 SOT 开关。此外，热稳定性因子 (${\Delta }$) 是根据温度相关的 SOT 切换计算得出的，以满足热稳定性标准，即这种新兴的 SOT-MRAM 技术 > 10 年。