The key feature of NCFET (negative capacitance field effect transistor) is its sub-threshold slope (SS) < 60 mV/decade at 300 K. In this work, the n-type NCFET (i.e., pull-down (PD) and passgate (PG) transistor in six-transistor (6T) SRAM bit-cell) has SS of 53.92 mV/decade, and the p-type NCFET (i.e., pull-up (PU) transistor in the 6T SRAM bit-cell) has SS of 58.96 mV/decade. In the NCFET-based SRAM cell (vs. conventional SRAM cell with conventional planar bulk MOSFETs), its read (hold)-stability and write-ability are evaluated by the metric of read static noise margin (SNM) and write-ability current (Iw), respectively. Then, under process-induced random variation, sensitivities of SNM and Iw are extracted. Finally, the yield of NCFET-based SRAM array (vs. conventional SRAM array) is quantitatively estimated using the cell-sigma.

中文翻译：

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基于 NCFET 的 6-T SRAM：基于变化感知灵敏度的良率估计

NCFET（负电容场效应晶体管）的关键特性是其亚阈值斜率 (SS) < 60 mV/decade at 300 K。 在这项工作中，n 型 NCFET（即下拉 (PD) 和 passgate六晶体管 (6T) SRAM 位单元中的 (PG) 晶体管的 SS 为 53.92 mV/decade，而 p 型 NCFET（即 6T SRAM 位单元中的上拉 (PU) 晶体管）具有 SS 58.96 mV/十年。在基于 NCFET 的 SRAM 单元（与具有传统平面体 MOSFET 的传统 SRAM 单元相比）中，其读取（保持）稳定性和写入能力通过读取静态噪声容限 (SNM) 和写入能力电流的指标进行评估。 Iw)，分别。然后，在过程引起的随机变化下，提取 SNM 和 Iw 的灵敏度。最后，基于 NCFET 的 SRAM 阵列（与传统 SRAM 阵列相比）的良率使用 cell-sigma 进行定量估计。