Based on the device physics, a mobility model for organic thin-film transistors (OTFTs) is presented considering temperature and contact resistance. As a function of the surface potential, the mobility model including hopping mechanism is able to explain the dependence of temperature and gate bias. The contact resistance is also considered in order to extract the correct mobility. Furthermore, with the assumption that the trapped carrier concentration dominates Poisson’s equation, and combining the mobility model, a DC compact model accounting for contact resistance and temperature is proposed suitable for the temperature scaling from 83 to 295K. Through the extensive comparisons between the model results and the numerical iteration or experimental data, the validity of the mobility and current models is strongly supported.

中文翻译：

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考虑有机薄膜晶体管温度和接触电阻的迁移率模型

基于器件物理学，提出了考虑温度和接触电阻的有机薄膜晶体管 (OTFT) 迁移率模型。作为表面电位的函数，包括跳跃机制的迁移率模型能够解释温度和栅极偏置的依赖性。为了提取正确的迁移率，还考虑了接触电阻。此外，假设俘获载流子浓度支配泊松方程，并结合迁移率模型，提出了一种考虑接触电阻和温度的 DC 紧凑模型，适用于从 83 到 295K 的温度缩放。通过模型结果与数值迭代或实验数据之间的广泛比较，有力地支持了流动性和当前模型的有效性。