A 0.28-inch InGaN-based blue micro-LED display with 256 pixel-per-inch resolution and a pitch of $100~{{\mu }}\text{m}$ was successfully fabricated in this study. A thick Ti/Al/Ti/Au interconnection metal was deposited on the n-type gallium nitride (n-GaN) region to reduce the interconnection resistance. The micro-LED array with interconnection metal exhibits better electrical property consistency as compared with that of the traditional one. The output power, forward voltage, and external quantum efficiency of micro-LED, which measured under 1-mA current injection with the full lighting mode, are 0.8 mW, 3.0 V, and 10%, respectively. This technique has the potential to integrate InGaN-based LEDs with quantum dots for full-color applications.

中文翻译：

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分辨率为256像素/英寸的无源矩阵LED微型显示器的工艺集成与互连设计

在这项研究中成功制造了一个 0.28 英寸基于 InGaN 的蓝色微型 LED 显示器，其分辨率为 256 像素/英寸，间距为 $100~{{\mu }}\text{m}$。在 n 型氮化镓 (n-GaN) 区域上沉积厚的 Ti/Al/Ti/Au 互连金属以降低互连电阻。与传统阵列相比，具有互连金属的微型LED阵列表现出更好的电性能一致性。micro-LED 的输出功率、正向电压和外量子效率，在 1-mA 电流注入和全照明模式下测量，分别为 0.8 mW、3.0 V 和 10%。该技术有可能将基于 InGaN 的 LED 与量子点集成到全色应用中。