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Effective Concentration Profile: A Novel 1-D analysis of the Variation of Lateral Thickness (VLT) Lateral Power Devices
IEEE Journal of the Electron Devices Society ( IF 2.0 ) Pub Date : 2020-01-01 , DOI: 10.1109/jeds.2020.2976637
Jun Zhang , Yu-Feng Guo , Chen-Yang Huang , Fang-Ren Hu

The VLT technique features for its irregular thickness of drift region and therefore realize the even surface electric field even with a uniformly doped drift region. However, the sophisticated structure of the drift region also making 2-D methods impractical in both modeling and explaining VLT’s physical nature. In this paper, based on the Effective Concentration Profile (ECP) theory, a simple but effective 1-D modeling methodology is proposed to provide physical insight into the VLT technique. The VLT-ECP concept indicates that by physically removing the region that above Charge Appointment Line (CAL), the charge contributes to the lateral depletion can be reduced to zero leading to an even surface electric field. Further, an optimization criterion is proposed to provide useful guidance for the designing of VLT lateral power devices in practice. The comparison between the analytical results obtained by the proposed model and TCAD simulations verified the veracity and effectiveness of the proposed methodology.

中文翻译:

有效浓度分布:横向厚度 (VLT) 横向功率器件变化的新型一维分析

VLT技术的特点是漂移区的厚度不规则,因此即使在均匀掺杂的漂移区也能实现均匀的表面电场。然而,漂移区的复杂结构也使得二维方法在建模和解释 VLT 的物理性质方面不切实际。在本文中,基于有效浓度分布 (ECP) 理论,提出了一种简单但有效的一维建模方法,以提供对 VLT 技术的物理洞察。VLT-ECP 概念表明,通过物理去除电荷预约线 (CAL) 上方的区域,可以将导致横向耗尽的电荷减少到零,从而产生均匀的表面电场。此外,还提出了一个优化标准,为实践中 VLT 横向功率器件的设计提供有用的指导。
更新日期:2020-01-01
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