Due to the high number of reachable conductance levels in resistive switching devices, they are good candidates to implement artificial synaptic devices. In this work, we have studied the control of the intermediate conductance levels in HfO2-based MIM capacitors using current pulses. The set transition can be controlled in a linear way using this kind of signal. The potentiation characteristic is not affected by the pulse length due to the filament formation takes place in very short times. This behavior does not allow using identical pulses to obtain the potentiation characteristic. The transient response of the devices when applying current pulses showed the filament formation is characterized by a peak in the voltage transient signal. No depression characteristic can be obtained using current signals due to the abrupt reset transition. However, the depression characteristic can be obtained using voltage pulses, so combining both signals should allow control the synaptic weight in an appropriate way.

中文翻译：

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控制 RRAM 器件中电导的电流脉冲

由于电阻开关器件中有大量可达到的电导水平，因此它们是实现人工突触器件的良好候选者。在这项工作中，我们研究了使用电流脉冲控制 HfO2 基 MIM 电容器的中间电导水平。可以使用这种信号以线性方式控制设置转换。由于灯丝形成发生在很短的时间内，因此增强特性不受脉冲长度的影响。这种行为不允许使用相同的脉冲来获得增强特性。施加电流脉冲时器件的瞬态响应表明灯丝形成的特征在于电压瞬态信号的峰值。由于突然的复位转换，使用电流信号无法获得抑制特性。然而，