In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN p-n junction termination (RPN). The SBD has a current output of 1 kA/cm2 at VF=2.5V_{F}=2.5 V, a low VonV_{on} of 0.66 V ± 0.017 V, a low Ron,spR_{on,sp} of 1.4 mΩ⋅\text{m}\Omega \cdot cm2, current ON/OFF ratio of over 10910^{9} (−3 V~3 V). By introducing the RPN, the breakdown voltage can boost from 459 V to 1419 V, and power figure-of-merit (FOM) can reach 1438 MV/cm2. It is shown that the presence of the RPN with a suitable anode recess depth can generate an electric field (EF) opposite to the built-in EF at the center of the second top p-n junction, which can decrease the EF peak intensity and make the electric field more uniformly distributed inside the device. Finally, the leakage current of the SBD is inhibited and the breakdown voltage is increased.

中文翻译：

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具有反向 pn 结端接的 1.4kV 准垂直 GaN 肖特基势垒二极管


在本文中，我们展示了具有反向 GaN pn 结终端 (RPN) 的高性能准垂直蓝宝石基 GaN 肖特基势垒二极管 (SBD)。 SBD 在 VF=2.5V_{F}=2.5 V 时的电流输出为 1 kA/cm2，低 VonV_{on} 为 0.66 V ± 0.017 V，低 Ron,spR_{on,sp} 为 1.4 mΩ⋅ \text{m}\Omega \cdot cm2，电流开关比超过 10910^{9} (−3 V~3 V)。通过引入RPN，击穿电压可以从459 V提升到1419 V，功率品质因数（FOM）可以达到1438 MV/cm2。结果表明，具有合适阳极凹陷深度的 RPN 的存在可以在第二顶部 pn 结中心产生与内置 EF 相反的电场（EF），这可以降低 EF 峰值强度，并使器件内部电场分布更加均匀。最终抑制SBD的漏电流，提高击穿电压。