Temperature dependence under various HCD conditions was analyzed in 14 nm node FinFETs. Unlike oxide traps, interface traps show different temperature dependence depending on HCD voltage conditions. Therefore, the interface traps were separated into three components and the temperature dependence was analyzed for each component. Multiple particle process (MP) and Field enhanced thermal degradation process (FP) have a constant temperature dependence regardless of voltage conditions. On the other hand, the temperature dependence of Single particle process (SP) varies depending on the voltage condition because SP is affected by scattering. However, the components of the interface traps in at nominal operating voltage changes since self-heating effect is different comparing the accelerated voltage. Therefore, we predicted the ratio of each component under nominal operating condition.

中文翻译：

---

机理分离热载体降解温度依存性分析

在 14 nm 节点 FinFET 中分析了各种 HCD 条件下的温度依赖性。与氧化物陷阱不同，界面陷阱根据 HCD 电压条件表现出不同的温度依赖性。因此，界面陷阱被分成三个组件，并分析了每个组件的温度依赖性。无论电压条件如何，多粒子过程 (MP) 和场增强热降解过程 (FP) 都具有恒定的温度依赖性。另一方面，单粒子过程 (SP) 的温度依赖性因电压条件而异，因为 SP 受散射影响。然而，由于自热效应与加速电压相比不同，因此在标称工作电压下界面的组件会发生变化。所以，