This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device. The peak of the emitted light spectrum is located at 365 nm, corresponding to the bandgap of the GaN layer. This device uses a simple and cost-effective process, and shows the possibility for use in applications such as optical interconnects and optoelectronic integrated circuits.

中文翻译：

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使用二维电子气和空穴的辐射复合的具有内置光发射器的 AlGaN/GaN 高电子迁移率晶体管

本文报道了一种新型 HEMT 结构，该结构包括通过带间辐射复合的内置光发射器，该光发射器通过来自 p-GaN 层的空穴和来自 2DEG 的电子提供。电气开关和照明功能能够组合到一个设备中。发射光谱的峰值位于 365 nm，对应于 GaN 层的带隙。该器件使用简单且具有成本效益的工艺，并显示出在光学互连和光电集成电路等应用中使用的可能性。