As nano-scale metal-oxide-semiconductor devices are cooled to temperatures below 1 K, detrimental effects due to unintentional dots become apparent. The reproducibility of the location of these unintentional dots suggests that there are other mechanisms in play, such as mechanical strains in the semiconductor introduced by metallic gates. Here, we investigate the formation of strain-induced dots on aluminum and palladium gated metal oxide semiconductor (MOS) quantum devices using COMSOL Multiphysics. Simulation results show that the strain effect on the electrochemical potential of the system can be minimized by replacing aluminum with palladium as the gate material and increasing the thickness of the gate oxide.

中文翻译：

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铝和钯门控MOS量子点系统的应变效应比较

随着纳米级金属氧化物半导体器件被冷却到低于1 K的温度，由于无意识的点引起的有害影响变得明显。这些无意点的位置的可重复性表明，还有其他机制在起作用，例如金属栅极在半导体中引入的机械应变。在这里，我们研究使用COMSOL Multiphysics在铝和钯门控金属氧化物半导体（MOS）量子器件上形成应变感应点的方法。仿真结果表明，通过用钯作为栅极材料代替铝并增加栅极氧化物的厚度，可以最大程度地降低应变对系统电化学势的影响。