Abstract Excellent dielectric frequency, bias, and temperature stability of bismuth silicate (Bi2SiO5, BSO) thin films with a low dielectric loss has been obtained in this study. The thin films were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method at a relatively low annealing temperature of 500 °C. The BSO films have a preferred growth along (200) orientation with dense fine-grained surface morphology. The dielectric constant and dielectric loss of the thin film annealed at 500 °C are 57 and 0.01, respectively, at 100 kHz, with little change between 1 kHz and 100 kHz and in the bias electric field range between −250 kV/cm and 250 kV/cm, indicating that the thin film exhibits a low dielectric loss as well as excellent frequency and bias field stability. The dielectric-temperature measurements confirmed that the BSO thin film annealed at 500 °C also has good temperature stability between 150 K and 450 K. Our results suggest that the BSO thin films have potential applications in the next-generation integrated capacitors.

中文翻译：

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具有低介电损耗的 500 oC 加工 Bi2SiO5 薄膜的高频、温度和偏置稳定介电特性

摘要 本研究获得了具有低介电损耗的硅酸铋 (Bi2SiO5, BSO) 薄膜优异的介电频率、偏置和温度稳定性。在 Pt/Ti/SiO2/Si 衬底上通过化学溶液沉积法在 500 °C 的相对较低的退火温度下制备薄膜。BSO 薄膜具有沿 (200) 取向的优选生长，具有致密的细粒表面形态。500 °C 退火薄膜的介电常数和介电损耗分别为 57 和 0.01，在 100 kHz 时，在 1 kHz 和 100 kHz 之间变化很小，偏电场范围在 -250 kV/cm 和 250 kV/cm，表明该薄膜表现出低介电损耗以及优异的频率和偏置场稳定性。