A Si-based vertical nanowire heterostructure array photodetector is designed and studied by a coupled three-dimensional optoelectronic simulation. Each nanowire is composed of an InP/In_0.53Ga_0.47As/InP axial p-i-n junction, which is designed to operate at telecommunication wavelengths. The results show that the absorption of the nanowire array strongly depends on the D/P ratio and nanowire diameter. By tuning the D/P ratio and diameter simultaneously, the peak absorption wavelength could be fixed at 1550 nm. Due to the light-trapping and light-concentrating properties, the nanowire array photodetector exhibits a remarkable responsivity beyond 0.8 A/W, several times higher than its thin film counterpart with the equivalent thickness. This work suggests that the III–V nanowire array is promising for high-performance Si-based photodetectors applied in optical telecommunication systems.

通过耦合三维光电仿真设计和研究了基于硅的垂直纳米线异质结构阵列光电探测器。每条纳米线均由InP / In _0.53 Ga _0.47组成As / InP轴向销结，设计用于电信波长。结果表明，纳米线阵列的吸收强烈取决于D / P比和纳米线直径。通过同时调节D / P比和直径，可以将峰值吸收波长固定在1550 nm。由于具有光捕获和聚光特性，纳米线阵列光电探测器的响应率超过0.8 A / W，比同等厚度的薄膜对应物高出几倍。这项工作表明，III–V纳米线阵列有望用于光通信系统中的高性能基于Si的光电探测器。