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Simple charge controlled floating memcapacitor emulator using DXCCDITA
Analog Integrated Circuits and Signal Processing ( IF 1.2 ) Pub Date : 2020-04-11 , DOI: 10.1007/s10470-020-01650-9
John Vista , Ashish Ranjan

This research article introduces generalized design procedure for incremental/decremental memcapacitor using analog active device that brings a charge controlled floating memcapacitor emulator. The demonstration of generalized model using Dual X current conveyor differential input transconductance amplifier (DXCCDITA) as an analog active device comes with grounded capacitor and single resistor. The important features of proposed memcapacitor emulator in comparison with other emulators are the absence of mutator and multiplier circuits that causes less design complexity, CMOS compatible circuits, high frequency operation and few more. The switching operation incorporated in proposed memcapacitor model provides incremental and decremental mode of operation to control the state of memcapacitor for real time application. The CMOS implementation of DXCCDITA uses 0.18 µm CMOS technology parameter for the design verification. The performance of the memcapacitor is verified using PSPICE simulation and the observation validates the synchronization of theoretical perspective. An adaptive learning circuit is examined as an application with the proposed memcapacitor model that validates the usage of proposed model.



中文翻译:

使用DXCCDITA的简单电荷控制的浮动膜电容器仿真器

本研究文章介绍了使用带电荷控制的浮动薄膜电容器仿真器的模拟有源器件来进行增量/递减薄膜电容器的通用设计过程。使用双X电流传送器差分输入跨导放大器(DXCCDITA)作为模拟有源器件的通用模型演示带有接地电容器和单个电阻器。与其他仿真器相比,拟议的电容器仿真器的重要特征是不存在导致设计复杂度降低的mutator和乘法器电路,CMOS兼容电路,高频操作等。拟议的储能电容器模型中包含的开关操作提供了增量和减量的运行模式,以控制储能电容器的状态,以实现实时应用。DXCCDITA的CMOS实现使用0.18 µm CMOS技术参数进行设计验证。使用PSPICE仿真验证了电容器的性能,观察结果验证了理论观点的同步性。自适应学习电路作为具有建议的记忆电容器模型的应用进行了检验,该模型验证了建议模型的使用。

更新日期:2020-04-20
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