Abstract An experimental study based on pulsed I-V characterization is conducted at various temperatures to estimate the losses of GaN High-Electron-Mobility Transistors (HEMTs) for switching circuit applications. The estimation of the GaN HEMT power losses is performed by a SPICE simulation using a non-segmented Electro-thermal model. The parameters of this model are extracted using Levenberg–Marquardt Algorithm. The proposed modeling methodology is compared to literature and shows good convergence of static characteristics. The temperature dependency of device parameters is also taken into consideration. Furthermore, the modelled device is verified in a real switching application using a developed efficient switching bench. The verification of the GaN HEMT model shows a good convergence to measurements in term of conduction power losses. Finally, the evolution of the GaN HEMT power losses in switching applications is modelled as a function of the temperature and output current.

中文翻译：

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基于实验表征的功率开关应用中 GaN HEMT 的损耗估算

摘要 一项基于脉冲 IV 特性的实验研究在不同温度下进行，以估计用于开关电路应用的 GaN 高电子迁移率晶体管 (HEMT) 的损耗。GaN HEMT 功率损耗的估计是通过使用非分段电热模型的 SPICE 模拟来执行的。该模型的参数是使用 Levenberg-Marquardt 算法提取的。所提出的建模方法与文献进行了比较，并显示出静态特性的良好收敛性。还考虑了器件参数的温度依赖性。此外，使用开发的高效开关台在实际开关应用中验证了建模设备。GaN HEMT 模型的验证表明，在传导功率损耗方面与测量结果具有良好的收敛性。最后，