Abstract Pt additive to Si-based flux in the vapor-liquid-solid (VLS) process for 4H–SiC epitaxial films has been successful in suppressing the step bunching as well as in promoting the step-flow growth mode at growth temperatures much lower than 2000 °C, as evidenced by in situ laser microscope observation of a model solution growth chemical interface. As a result, the SiC film surface became remarkably flat, exhibiting well-regulated step-and-terrace structures with narrow terrace widths and straight step lines; the polytype of 4H–SiC was much more stabilized in the grown SiC films even at a growth temperature of 1250 °C. Furthermore, there is little concern about incorporation of Pt atoms as an impurity into the grown SiC films so that their Schottky junction properties are almost as excellent as those of 4H–SiC single crystals.

中文翻译：

---

铂添加剂对高质量 SiC 单晶薄膜气-液-固生长化学界面的影响

摘要 在 4H-SiC 外延膜的汽-液-固 (VLS) 工艺中，将 Pt 添加到 Si 基助熔剂中已成功地抑制了阶梯聚束以及在远低于2000 °C，如模型溶液生长化学界面的原位激光显微镜观察所证明的那样。结果，碳化硅薄膜表面变得非常平坦，呈现出良好调节的阶梯和阶梯结构，阶梯宽度窄，阶梯线直线；即使在 1250°C 的生长温度下，4H-SiC 的多晶型在生长的 SiC 薄膜中也更加稳定。此外，几乎不用担心将 Pt 原子作为杂质掺入生长的 SiC 膜中，因此它们的肖特基结特性几乎与 4H-SiC 单晶一样出色。