As the foremost semiconductor, silicon (Si) is the ‘lifeblood’ of the modern microelectronics and optoelectronics industries. The development of Si infrared (IR) photodetectors is of great significance for Si-based optoelectronic integration and communication. The use of black Si, which can extend the absorption edge of the Si bandgap to IR wavelengths below the bandgap, is a promising strategy to make IR detectors directly integrated on Si wafers for optical communication and detection. To produce black Si, ultrafast laser pulses in an ambient atmosphere or an atmosphere including precursors are used to fabricate periodically arranged micro-nanostructures and induce various defects on Si surfaces. This phenomenon leads to a ‘black’ color because of a strong absorption from visible light to IR light. In this review, the surface morphology, crystalline structures, hyperdoping, IR absorption properties, and optoelectronic devices of black Si fabricated by ultrafast lasers over the past 20 years are systematically summarized, focusing especially on its most important application for IR photodetectors. Finally, future prospects and strategies for improvement are suggested. It is expected that black Si can be a competitive candidate for IR optoelectronics in the future if thermostable IR absorption, a low concentration of free carriers, and a high photoelectric conversion efficiency of black Si can be achieved.

作为最重要的半导体，硅（Si）是现代微电子和光电子行业的“命脉”。Si红外（IR）光电探测器的开发对于基于Si的光电集成和通信具有重要意义。黑色Si的使用可以将Si带隙的吸收边缘扩展到带隙以下的IR波长，这是使IR检测器直接集成在Si晶圆上进行光通信和检测的有前途的策略。为了产生黑硅，在环境气氛或包括前体的气氛中的超快激光脉冲用于制造周期性排列的微纳米结构，并在硅表面上引起各种缺陷。由于从可见光到红外光的强烈吸收，这种现象导致“黑色”颜色。在这篇评论中，表面形态 总结了过去20年中用超快激光制造的黑硅的晶体结构，超掺杂，红外吸收特性和光电器件，尤其着重于红外光电探测器最重要的应用。最后，提出了改进的未来前景和策略。如果可以实现黑硅的热稳定的IR吸收，低浓度的自由载流子和高的光电转换效率，则有望在将来将其作为IR光电的竞争性候选物。建议未来的前景和改进策略。如果可以实现黑硅的热稳定的IR吸收，低浓度的自由载流子和高的光电转换效率，则有望在将来将其作为IR光电的竞争性候选物。建议未来的前景和改进策略。如果可以实现黑硅的热稳定的IR吸收，低浓度的自由载流子和高的光电转换效率，则有望在将来将其作为IR光电的竞争性候选物。