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Oxygen Incorporation Kinetics in Vicinal m(10−10) Gallium Nitride Growth by Metal‐Organic Vapor Phase Epitaxy
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-04-20 , DOI: 10.1002/pssr.202000142 Daichi Yosho 1 , Fumiya Shintaku 1 , Yuya Inatomi 1 , Yoshihiro Kangawa 1, 2, 3 , Jun-Ichi Iwata 4 , Atsushi Oshiyama 3 , Kenji Shiraishi 3 , Atsushi Tanaka 3 , Hiroshi Amano 3
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-04-20 , DOI: 10.1002/pssr.202000142 Daichi Yosho 1 , Fumiya Shintaku 1 , Yuya Inatomi 1 , Yoshihiro Kangawa 1, 2, 3 , Jun-Ichi Iwata 4 , Atsushi Oshiyama 3 , Kenji Shiraishi 3 , Atsushi Tanaka 3 , Hiroshi Amano 3
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The oxygen incorporation kinetics of vicinal m(10−10) gallium nitride (GaN) growth during metal‐organic vapor phase epitaxy is clarified using a diffusion equation‐based approach that incorporates diffusion potentials obtained by large‐scale density functional theory (DFT) calculations. A diffusion model based on the Burton, Cabrera and Frank (BCF) theory is proposed, and then, the oxygen concentration in the epitaxial films is calculated quantitatively. The calculation results agree with the experimental tendency that the oxygen concentration in the −c 5° off m‐GaN epilayers is lower than that in the +c 5° off m‐GaN epilayers. Then, the off‐angle dependence of oxygen incorporation in vicinal m‐GaN growth is predicted.
中文翻译：
金属有机汽相外延生长m（10-10）氮化镓中的氧结合动力学
使用基于扩散方程的方法阐明了邻位m（10-10）氮化镓（GaN）在金属有机气相外延生长过程中的氧结合动力学，该方法结合了通过大规模密度泛函理论（DFT）计算获得的扩散势。提出了基于Burton，Cabrera和Frank（BCF）理论的扩散模型，然后定量计算了外延膜中的氧浓度。计算结果与实验趋势相吻合，即-c 5°off m GaN外延层中的氧浓度低于+ c 5°off m GaN外延层中的氧浓度。然后，在邻近的氧结合的截止角度依赖性米‐GaN的增长是可以预测的。
更新日期：2020-04-20
中文翻译：
金属有机汽相外延生长m（10-10）氮化镓中的氧结合动力学
使用基于扩散方程的方法阐明了邻位m（10-10）氮化镓（GaN）在金属有机气相外延生长过程中的氧结合动力学，该方法结合了通过大规模密度泛函理论（DFT）计算获得的扩散势。提出了基于Burton，Cabrera和Frank（BCF）理论的扩散模型，然后定量计算了外延膜中的氧浓度。计算结果与实验趋势相吻合，即-c 5°off m GaN外延层中的氧浓度低于+ c 5°off m GaN外延层中的氧浓度。然后，在邻近的氧结合的截止角度依赖性米‐GaN的增长是可以预测的。
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