Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation,Physica Status Solidi-Rapid Research Letters

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Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-04-15 , DOI: 10.1002/pssr.202000108
Yingmei Liu _{1,

2} , Yuanyuan Chu _{1,

2} , Yue Lu ₁ , Ying Li ₁ , Shengjuan Li ₁ , Chuan Jin ₃ , Jianxin Chen ₃ , Xingjun Wang ₂

Affiliation

High‐quality lattice‐matched and mismatched GaAs_1–xSb_x (0.37 < x < 0.57) epilayers are grown on InP by molecular beam epitaxy. The localized states are confirmed by the S‐shape behavior of the temperature‐dependent photoluminescence (PL). With the help of a model based on a redistribution process of localized excitons, the degree of carrier localization is estimated quantitatively. It is found that the degree of carrier localization reaches a maximum for the lattice‐matched sample with Sb = 47.7%, indicating that carrier localization effects are mainly due to compositional fluctuations. This result is corroborated by the power‐dependent PL. In addition, power‐dependent Raman measurements give a hint that the thermal conductivity of the lattice‐matched sample is ≈50% higher than that of lattice‐mismatched samples with Sb = 37.9% and 56.2%. Thus the abnormal S‐shape behavior (blue–redshift) that occurs in the power‐dependent PL from the lattice‐mismatched GaAsSb samples is attributed to both the lower degree of carrier localization and the enhanced laser heating effect caused by their smaller thermal conductivity.

中文翻译：

晶格优化的GaAsSb / InP异质结，可实现有效的载流子限制和散热

高质量晶格匹配和不匹配的GaAs _{1– x} Sb _x（0.37 < x <0.57）外延层是通过分子束外延在InP上生长的。局部状态由与温度有关的光致发光（PL）的S形行为证实。借助基于局部性激子重新分布过程的模型，可以对载体的局部化程度进行定量估计。结果发现，Sb = 47.7％的晶格匹配样品的载流子局部化程度达到最大值，表明载流子局部化效应主要归因于成分波动。功率相关PL证实了这一结果。此外，与功率有关的拉曼测量结果表明，晶格匹配样品的热导率比Sb = 37.9％和56.2％的晶格不匹配样品的导热率高约50％。

更新日期：2020-04-15

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