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Laser-induced silicon nanocolumns by ablation technique
Journal of Radiation Research and Applied Sciences ( IF 1.7 ) Pub Date : 2020-04-10 , DOI: 10.1080/16878507.2020.1740395
W. A. Ghaly 1, 2 , H. T. Mohsen 1, 2
Affiliation  

ABSTRACT

High-purity silicon wafers were irradiated in ultrapure water environment by laser ablation (LA). Columnar structures were induced on the surface using multiple pulses from Nd:YAG laser. Nd:YAG pulsed laser irradiance with 1.3 × 109 W/cm2 operated at 266 nm wavelength, 6 ns pulse duration, and 10 mJ pulse energy with different repetition rates 10 Hz and 20 Hz. Shape, structure, and size distribution of silicon nanocolumns were determined by scanning electron microscope and particle counting method. High populations of silicon nanoparticles were formed on the surfaces of the substrates after LA process. Elemental composition analysis was performed by energy dispersive x-ray spectrometer for the silicon targets and the deposited nanoparticles. Surface area of the silicon nanoparticles was measured by gas sorption process. UV-Visible spectrophotometer was used to detect the scattered light from the nanocolumns structure on the silicon target.



中文翻译:

烧蚀技术激光诱导的硅纳米柱

摘要

在超纯水环境中通过激光烧蚀(LA)辐照高纯度硅晶片。使用Nd:YAG激光的多个脉冲在表面上诱导出柱状结构。Nd:YAG脉冲激光辐照度为1.3×10 9  W / cm 2在266 nm波长,6 ns脉冲持续时间和10 mJ脉冲能量下工作,重复频率分别为10 Hz和20 Hz。通过扫描电子显微镜和颗粒计数法确定了硅纳米柱的形状,结构和尺寸分布。在LA处理之后,在基板的表面上形成大量的硅纳米颗粒。通过能量色散X射线光谱仪对硅靶和沉积的纳米颗粒进行元素组成分析。硅纳米颗粒的表面积通过气体吸附法测量。紫外可见分光光度计用于检测来自硅靶上纳米柱结构的散射光。

更新日期:2020-04-20
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