Utilization of the integrated gate-commutated thyristor as a semiconductor switch in the series resonant converter for isolated medium-voltage dc-dc conversion offers an opportunity for high conversion efficiency while operating at the high switching frequency. Low conduction losses of the switch as well as decreased switching losses due to zero-voltage turn-on and low-current turn-off in the subresonant operating regime are reflected in the efficiency increase of the converter. This article explores the switching behavior of the semiconductor device under low currents while giving insight into the achievable turn-off energy losses and duration of the turn-off transients, as information required during the design process of series resonant converter. Experimental measurements confirm trends observed with simulation results related to turn-off delay process, providing further understanding of the switching losses and achievable performances under resonant mode of operation.

中文翻译：

---

IGCT 低电流开关__CAD 和实验表征


利用集成门极换流晶闸管作为串联谐振转换器中的半导体开关进行隔离式中压 DC-DC 转换，可以在高开关频率下工作时实现高转换效率。开关的低传导损耗以及由于次谐振工作状态下的零电压开通和低电流关断而降低的开关损耗都反映在转换器效率的提高中。本文探讨了半导体器件在低电流下的开关行为，同时深入了解可实现的关断能量损耗和关断瞬态持续时间，作为串联谐振转换器设计过程中所需的信息。实验测量证实了与关断延迟过程相关的仿真结果观察到的趋势，从而进一步了解谐振操作模式下的开关损耗和可实现的性能。