In this article, we have carried out a comprehensive study on the wireless power transfer (WPT) concept from the rectifier circuit construction and state-of-art GaN Schottky barrier diode (SBD) device technology to the WPT system demonstration. Benefited from the wide bandgap, high mobility, and saturation velocity of the gallium nitride (GaN) two-dimensional electron gas, engineered lateral GaN SBD with low turn-on voltage (Von) of 0.47 V, on-resistance (Ron) of 4 Ω, breakdown voltage of 170 V, and junction capacitance $(C_{j})$ of 0.32 pF at 0 V bias are achieved, which satisfy the fundamental requirements for microwave power rectification. After incorporating the high-performance GaN SBD into the optimized rectifier circuit, high radio frequency (RF)/dc conversion efficiency of 79% is achieved, and the input power of per single GaN SBD is increased by 10X when compared with that of a commercially available silicon (Si) SBD at the same efficiency of 50% and frequency of 2.45 GHz. Based on the rectifier circuit, a microwave power transfer system is constructed with 400 light emitting diodes lighted up, verifying the great promise of adopting high-power GaN SBD for the wireless high-power transfer as an alternative energy-harvesting technique for future WPT application.

中文翻译：

---

用于具有高 RF/DC 转换效率的无线高功率传输应用的横向 GaN 肖特基势垒二极管：从电路构建和器件技术到系统演示


在本文中，我们对无线功率传输 (WPT) 概念进行了全面的研究，从整流电路构造和最先进的 GaN 肖特基势垒二极管 (SBD) 器件技术到 WPT 系统演示。受益于氮化镓 (GaN) 二维电子气的宽带隙、高迁移率和饱和速度，设计的横向 GaN SBD 具有 0.47 V 的低导通电压 (Von)、4 的导通电阻 (Ron) Ω、击穿电压为170 V、0 V偏压下的结电容$(C_{j})$为0.32 pF，满足微波功率整流的基本要求。将高性能GaN SBD融入优化的整流电路后，实现了79%的高射频（RF）/直流转换效率，单个GaN SBD的输入功率比商用产品提高了10倍可用硅 (Si) SBD，效率相同为 50%，频率为 2.45 GHz。基于该整流电路，构建了一个由 400 个发光二极管点亮的微波功率传输系统，验证了采用高功率 GaN SBD 进行无线高功率传输作为未来 WPT 应用的替代能量收集技术的巨大前景。