当前位置: X-MOL 学术IEEE Microw. Wirel. Compon. Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
A +3-dBm-EIRP 240-GHz Circular-Polarized Radiator Utilizing a Sub-THz PA in 65-nm CMOS
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2020-04-01 , DOI: 10.1109/lmwc.2020.2975111
Van-Son Trinh , Hsiang Nerng Chen , Jung-Dong Park

We present a circular-polarized radiator in a 65-nm CMOS with a measured equivalent isotropically radiated power (EIRP) of +3 dBm at 239.2 GHz. To boost the radiating power, the subterahertz signal generated from a tripler is enhanced by a fundamental driving amplifier before being fed to an on-chip two-array patch antenna for circular-polarized radiation. A $W$ -band voltage-controlled oscillator (VCO) was codesigned with a push–pull driver to optimize the output power and efficiency. Using the frequency-tuning capability of the $W$ -band VCO, the output frequency was precisely tuned to 239.2 GHz, which provided the maximum output power of +0.5 dBm. The fabricated radiator occupies the chip area of 1.44 mm2, and it consumes dc power of 272 mW under a 1.2-V supply.

中文翻译:

+3-dBm-EIRP 240-GHz 圆偏振辐射器,采用 65-nm CMOS 中的亚太赫兹 PA

我们在 65-nm CMOS 中展示了一个圆偏振辐射器,在 239.2 GHz 下测得的等效全向辐射功率 (EIRP) 为 +3 dBm。为了提高辐射功率,三倍频器产生的亚太赫兹信号由基本驱动放大器增强,然后被馈送到片上双阵列贴片天线以进行圆极化辐射。一种 $W$ 带压控振荡器 (VCO) 与推挽驱动器共同设计,以优化输出功率和效率。使用频率调谐功能 $W$ -band VCO,输出频率精确调谐至239.2 GHz,提供+0.5 dBm的最大输出功率。制造的散热器占据了 1.44 mm 2的芯片面积,在 1.2-V 电源下消耗 272 mW 的直流功率。
更新日期:2020-04-01
down
wechat
bug