We present a circular-polarized radiator in a 65-nm CMOS with a measured equivalent isotropically radiated power (EIRP) of +3 dBm at 239.2 GHz. To boost the radiating power, the subterahertz signal generated from a tripler is enhanced by a fundamental driving amplifier before being fed to an on-chip two-array patch antenna for circular-polarized radiation. A $W$ -band voltage-controlled oscillator (VCO) was codesigned with a push–pull driver to optimize the output power and efficiency. Using the frequency-tuning capability of the $W$ -band VCO, the output frequency was precisely tuned to 239.2 GHz, which provided the maximum output power of +0.5 dBm. The fabricated radiator occupies the chip area of 1.44 mm², and it consumes dc power of 272 mW under a 1.2-V supply.

中文翻译：

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+3-dBm-EIRP 240-GHz 圆偏振辐射器，采用 65-nm CMOS 中的亚太赫兹 PA

我们在 65-nm CMOS 中展示了一个圆偏振辐射器，在 239.2 GHz 下测得的等效全向辐射功率 (EIRP) 为 +3 dBm。为了提高辐射功率，三倍频器产生的亚太赫兹信号由基本驱动放大器增强，然后被馈送到片上双阵列贴片天线以进行圆极化辐射。一种 $W$ 带压控振荡器 (VCO) 与推挽驱动器共同设计，以优化输出功率和效率。使用频率调谐功能 $W$ -band VCO，输出频率精确调谐至239.2 GHz，提供+0.5 dBm的最大输出功率。制造的散热器占据了 1.44 mm ²的芯片面积，在 1.2-V 电源下消耗 272 mW 的直流功率。