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Design of a Broadband High-Efficiency Hybrid Class-EFJ Power Amplifier
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2020-04-01 , DOI: 10.1109/lmwc.2020.2973487
Zhiwei Zhang , Zhiqun Cheng , Huajie Ke , Guohua Liu , Sudong Li

This letter proposes a novel broadband, high-efficiency power amplifier (PA). The high-efficiency characteristics of Class-EF PAs and the large bandwidth advantages of Class-J PAs are effectively combined in the proposed PA. By theoretically analyzing the impedances of traditional Class-EF PAs and class-J PAs, we can consider the possibility of combining these two types of PAs. The conditions that need to be met are derived. In order to verify the effectiveness of the proposed method, a high-efficiency wideband Class-EFJ PA is designed and fabricated by using CGH40010F GaN HEMT. The measurement results demonstrate that the Class-EFJ PA has saturated output power of 40.5–42.7 dBm in 1.2–3.6 GHz. Drain efficiency of 63%–73% was achieved over the same frequency band. The Adjacent Channel Leakage Ratio (ACLR) was also better than −31.2 dBc at an average output power of 35.6 dBm.

中文翻译:

一种宽带高效混合EFJ类功率放大器的设计

这封信提出了一种新型宽带、高效功率放大器 (PA)。所提出的 PA 有效地结合了 EF 类 PA 的高效特性和 J 类 PA 的大带宽优势。通过对传统EF类PA和J类PA的阻抗进行理论上的分析,我们可以考虑将这两种PA组合起来的可能性。推导出需要满足的条件。为了验证所提出方法的有效性,使用 CGH40010F GaN HEMT 设计并制造了高效宽带 Class-EFJ PA。测量结果表明,EFJ 类功率放大器在 1.2-3.6 GHz 下具有 40.5-42.7 dBm 的饱和输出功率。在相同的频带上实现了 63%–73% 的漏极效率。相邻通道泄漏比 (ACLR) 也优于 -31。
更新日期:2020-04-01
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