This letter presents a novel 5-GHz transmitter/ receiver (TX/RX) single-pole double-throw (SPDT) switch designed on a silicon substrate. The novelty of this SPDT switch is the possibility it offers to simultaneously design the transmission lines and the active elements, without packaging and consequently its parasitic effects and frequency limitations. The device is intended to be easily integrated into a system with a more complex function, e.g., with amplifiers and antennas. The codesign method offers great flexibility in the positioning and sizing of the active elements, i.e., semiconductor distributed doped areas (ScDDAs), which are integrated n+pp+ junctions, in order to obtain the best possible performances in both aspects. A demonstrator provides proof of the concept. In RX-mode, the insertion loss (IL) is 0.9 dB with isolation (ISO) higher than 30 dB. In TX-mode, IL is 2.38 dB and ISO is higher than 43 dB.

中文翻译：

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一种采用半导体分布式掺杂区的新型 5GHz SPDT 开关

这封信展示了一种设计在硅衬底上的新型 5 GHz 发射器/接收器 (TX/RX) 单刀双掷 (SPDT) 开关。这种 SPDT 开关的新颖之处在于它提供了同时设计传输线和有源元件的可能性，无需封装，因此无寄生效应和频率限制。该设备旨在轻松集成到具有更复杂功能的系统中，例如，带有放大器和天线。协同设计方法在有源元件（即集成 n+pp+ 结的半导体分布式掺杂区 (ScDDA)）的定位和尺寸方面提供了极大的灵活性，以便在这两个方面获得最佳性能。演示者提供了该概念的证明。在 RX 模式下，插入损耗 (IL) 为 0。9 dB，隔离度 (ISO) 高于 30 dB。在 TX 模式下，IL 为 2.38 dB，ISO 高于 43 dB。