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Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors
npj Computational Materials ( IF 9.4 ) Pub Date : 2020-04-09 , DOI: 10.1038/s41524-020-0314-9 Akiko Ueda , Yijin Zhang , Nobuyuki Sano , Hiroshi Imamura , Yoshihiro Iwasa
npj Computational Materials ( IF 9.4 ) Pub Date : 2020-04-09 , DOI: 10.1038/s41524-020-0314-9 Akiko Ueda , Yijin Zhang , Nobuyuki Sano , Hiroshi Imamura , Yoshihiro Iwasa
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
中文翻译:
出版商更正:基于漂移扩散模型的离子门控过渡金属二卤化硅晶体管的双极性器件仿真
该文件的修订版已经发布,可以通过文件顶部的链接进行访问。
更新日期:2020-04-09
中文翻译:
出版商更正:基于漂移扩散模型的离子门控过渡金属二卤化硅晶体管的双极性器件仿真
该文件的修订版已经发布,可以通过文件顶部的链接进行访问。