Effective Mass Enhancement and Thermal Conductivity Reduction for Improving the Thermoelectric Properties of Pseudo‐Binary Ge2Sb2Te5,Annalen Der Physik

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Effective Mass Enhancement and Thermal Conductivity Reduction for Improving the Thermoelectric Properties of Pseudo‐Binary Ge2Sb2Te5
Annalen Der Physik ( IF 2.2 ) Pub Date : 2019-12-27 , DOI: 10.1002/andp.201900390
Wenbing Du ₁ , Yayun Gu ₁ , Ke Wang ₁ , Xinxin Yang ₁ , Juanjuan Xing ₁ , Kai Guo ₁ , Jun Luo _{1,

2} , Jing‐Tai Zhao _{1,

3}

Affiliation

Ge₂Sb₂Te₅ is a famous phase‐change memory material for rewriteable optical storage, which is widely applied in the information storage field. The stable trigonal phase of Ge₂Sb₂Te₅ shows potential as a thermoelectric material as well, due to its tunable electrical transport properties and low lattice thermal conductivity. In this work, the carrier concentration and effective mass of Ge₂Sb₂Te₅ are modulated by substituting Te with Se. Meanwhile, the thermal conductivity reduces from 2.48 W m⁻¹ K⁻¹ for Ge₂Sb₂Te₅ to 1.37 W m⁻¹ K⁻¹ for Ge₂Sb₂Te_3.5Se_1.5 at 703 K. Therefore, the thermoelectric figure of merit zT increases from 0.24 for Ge₂Sb₂Te₅ to 0.41 for Ge₂Sb₂Te_3.5Se_1.5 at 703 K. This study reveals that Se alloying is an effective way to enhance the thermoelectric properties of Ge₂Sb₂Te₅.

中文翻译：

有效提高质量和降低导热率，以改善伪二进制Ge2Sb2Te5的热电性能

Ge ₂ Sb ₂ Te ₅是一种著名的可重写光存储相变存储材料，已广泛应用于信息存储领域。Ge ₂ Sb ₂ Te ₅的稳定三角相由于具有可调节的电传输特性和较低的晶格导热性，因此也显示出作为热电材料的潜力。在这项工作中，通过用Se代替Te来调节Ge ₂ Sb ₂ Te ₅的载流子浓度和有效质量。同时，Ge ₂ Sb ₂的导热系数从2.48 W m ^-1 K ^-1降低特₅〜1.37脉冲W M ^-1 ķ ^-1为戈₂的Sb ₂碲_3.5硒_1.5在703 K.因此，优点的热电zT值从0.24增加的Ge ₂ Sb的₂碲₅至0.41的Ge ₂ Sb的₂碲在703 K时_3.5 Se _1.5。这项研究表明，Se合金化是增强Ge ₂ Sb ₂ Te ₅的热电性能的有效方法。

更新日期：2019-12-27

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