ZnS Nanospheres for Optical Modulator in an Erbium‐Doped Fiber Laser,Annalen Der Physik

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ZnS Nanospheres for Optical Modulator in an Erbium‐Doped Fiber Laser
Annalen Der Physik ( IF 2.2 ) Pub Date : 2020-02-13 , DOI: 10.1002/andp.201900454
Jie Liu _{1,

2} , Xiaohui Li _{1,

2} , Jiangjiang Feng _{1,

2} , Chuang Zheng _{1,

2} , Yamin Wang _{1,

2} , Aocheng Wang ₃ , Xinfeng Liu ₃

Affiliation

Zinc sulfide (ZnS), which belongs to transition metal monochalcogenides, is a semiconductor material with wide direct band gap. It can potentially show some special applications (such as luminescence, phosphor, sensors, infrared window materials, photocatalysis) by changing the morphology, size, and crystal structure of semiconductor materials. However, ZnS nanospheres have not been studied as optical modulators until now. Herein, ZnS nanospheres are synthesized by the hydrothermal method and are used to realize optical modulators in an Er‐doped fiber laser. The evanescent field effect is utilized to incorporate the ZnS nanospheres on a tapered fiber. Furthermore, with the increase in pump power, the modulation interval gradually decreases to a minimum of 34.36 ns corresponding to the modulation frequency of 29.1 MHz, which is the highest modulation frequency to our knowledge in a ring cavity all‐fiber laser. These results demonstrate ZnS nanospheres together with the interaction of dispersion and nonlinearity in optical fibers can modulate the proposed lasers. This not only provides a new method for controlling the power and frequency of all optical modulators, but also marks an important step for ZnS materials in optics research and device applications.

中文翻译：

掺S光纤激光器中用于光调制器的ZnS纳米球

属于过渡金属单硫属元素化物的硫化锌（ZnS）是具有宽直接带隙的半导体材料。通过更改半导体材料的形态，尺寸和晶体结构，它有可能显示某些特殊应用（例如发光，磷光体，传感器，红外窗口材料，光催化）。然而，到目前为止，尚未研究ZnS纳米球作为光调制剂。此处，ZnS纳米球是通过水热法合成的，用于实现掺Er光纤激光器中的光学调制器。利用e逝场效应将ZnS纳米球掺入锥形纤维中。此外，随着泵浦功率的增加，调制间隔逐渐减小到最小34.36 ns，对应于29.1 MHz的调制频率，据我们所知，这是环形腔全光纤激光器中最高的调制频率。这些结果表明，ZnS纳米球以及光纤中色散和非线性的相互作用可以调制所提出的激光器。这不仅为控制所有光调制器的功率和频率提供了一种新方法，而且标志着ZnS材料在光学研究和器件应用中的重要一步。

更新日期：2020-02-13

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