Due to the unique bandgap tunability of bilayer graphene, the preparation of large‐sized bilayer graphene has attracted a wide range of attention. Herein, the preparation of bilayer graphene, from stacking order to growth mechanism, is reviewed, and the chemical vapor deposition (CVD) of AB‐stacked bilayer graphene on copper substrate is emphasized. Various methods and growth strategies to synthesize bilayer graphene and the corresponding growth mechanisms are discussed. Mechanisms of layer‐by‐layer growth, the hydrogen passivation of graphene edges for the formation of bilayers, and carbon atoms penetrating through a copper wall for bilayer growth are included and highlighted for a better understanding of controlling bilayer graphene uniformity and forming its stacking order. Finally, the remaining challenges and the potential development of CVD‐controlled growth of bilayer graphene are outlined.

中文翻译：

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双层石墨烯：从堆积顺序到生长机理

由于双层石墨烯的独特带隙可调性，大尺寸双层石墨烯的制备引起了广泛的关注。本文对双层石墨烯的制备方法进行了综述，从堆叠顺序到生长机理，重点介绍了AB堆叠双层石墨烯在铜基板上的化学气相沉积（CVD）方法。讨论了合成双层石墨烯的各种方法和生长策略以及相应的生长机理。包括并强调了逐层生长的机理，石墨烯边缘的氢钝化以形成双层以及穿透铜壁进行双层生长的碳原子，以更好地理解控制双层石墨烯的均匀性并形成其堆叠顺序。最后，