Recent transistors are one of state‐of‐the‐art products of semiconductor industry. As it has been required to be minimized to the nanoscale regime, the classical model from the microelectronics is often challenged by its discrepancy. Therefore, understanding the behavior of electrons in such regime is essential for transistor applications in nanoscale. Herein, the charge trapping and anisotropic diffusion behaviors of electrons in multistacked nanostructures composed of a blocking oxide, a charge storage layer of Au nanoclusters (NCs), a tunneling oxide, and silicon substrate are reported. Electrons are injected from the substrate to Au NCs via quantum tunneling effect. The charge retention and diffusion characteristics of the NCs are investigated by measuring surface potential. To explore the spatial dependence, a line‐ and dot‐shaped injection of charges is examined. Both of the accumulated electrons decay following an exponential function of time. However, the injected electrons with a line‐shape in Au NCs are found to have a larger time constant than those with a dot‐shape. This result implies that the initial spatial distribution of electrons plays a role in determining the equilibrium distribution of the charges in the nanostructure.

中文翻译：

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Al2O3介质中嵌入的Au纳米团簇上电荷的各向异性扩散

最近的晶体管是半导体工业的最新产品之一。由于需要将其最小化至纳米尺度，因此微电子学的经典模型经常受到其差异的挑战。因此，了解这种状态下的电子行为对于纳米级晶体管应用至关重要。在此，报道了在由阻挡氧化物，Au纳米团簇（NC）的电荷存储层，隧道氧化物和硅衬底组成的多层纳米结构中电子的电荷俘获和各向异性扩散行为。电子通过量子隧穿效应从基板注入到Au NCs中。通过测量表面电势来研究NC的电荷保留和扩散特性。为了探索空间依赖性，检查线形和点形的电荷注入。两个累积的电子都随时间的指数函数衰减。但是，发现Au NCs中线形注入的电子具有比点形注入的电子更大的时间常数。该结果表明，电子的初始空间分布在确定纳米结构中电荷的平衡分布方面起着作用。