Self‐Assembly of Well‐Separated AlN Nanowires Directly on Sputtered Metallic TiN Films,Physica Status Solidi-Rapid Research Letters

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Self‐Assembly of Well‐Separated AlN Nanowires Directly on Sputtered Metallic TiN Films
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-01-03 , DOI: 10.1002/pssr.201900615
Mani Azadmand _{1,

2} , Thomas Auzelle ₁ , Jonas Lähnemann ₁ , Guanhui Gao ₁ , Lars Nicolai ₁ , Manfred Ramsteiner ₁ , Achim Trampert ₁ , Stefano Sanguinetti ₂ , Oliver Brandt ₁ , Lutz Geelhaar ₁

Affiliation

Herein, the self‐assembled formation of AlN nanowires (NWs) by molecular beam epitaxy on sputtered TiN films on sapphire is demonstrated. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the NWs are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the NW sidewalls. The high crystalline quality of the NWs is evidenced by the observation of near‐band‐edge emission in the cathodoluminescence spectrum. The key factor for the low NW coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices using these NWs as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range.

中文翻译：

分离良好的AlN纳米线直接在溅射金属TiN膜上的自组装

本文中，通过分子束外延在蓝宝石上溅射的TiN薄膜上形成了AlN纳米线（NW）的自组装形成。基板的这种选择允许在1180°C的异常高温下生长。与以前的报告相反，西北地区被很好地分开，没有明显的合并。可以通过在衬底和NW侧壁上充分的Al原子扩散来解释这一成就。在阴极发光光谱中观察到近带边缘发射，证明了西北偏高的晶体质量。低NW聚结的关键因素是TiN膜，其椭圆偏振光谱和拉曼光谱表明是化学计量的。其金属性质对于使用这些NW作为（Al，

更新日期：2020-01-03

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