The letter reports the performance assessment of Au/n-Si type Schottky Junction Structure (SJS) with and without the graphene-PVP layer, classified as SJS1 and SJS2 devices. The electronic parameters by using the developed LabVIEW based program were calculated from raw data of I-V, C-V and G/ω-V measurements at room temperature. According to Thermionic Emission (TE) theory, the graphene-PVP layer significantly modified the barrier height than the other structure. Using the Ohm's Law, it is found that the R8h magnitude increases, while the R8 magnitude decreases for SJS2, according to SJS1 type device. Alternatively, using Cheung's and the modified Norde functions for the accuracy and reliability of the results, the obtained n, φBo, R8 values by both equations are in good agreement. Using the C-2-V and G/ω-V characteristics, the magnitudes of the electronic parameters, such as φBo(C-V), Vbi, VD, ND, EF , R8, etc., for the devices were calculated to supply more information. Also, the Ci and Cox magnitudes were calculated 1.299 × 10-10 F and 1.192 × 10-10 F at3 V and then, the interface layer thicknesses were obtained as 2.08 nm and 68.8 nm for SJS1 and SJS2, respectively. It can be concluded that the graphene-PVP layer significantly affects the quality and performance of Au/n-Si type SJS devices.

中文翻译：

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利用石墨烯-PVP纳米薄膜的IV、C鈭2-V和G/ω-V特性改善Au/n-Si型肖特基结结构的电子性能


该信报告了具有和不具有石墨烯-PVP 层的 Au/n-Si 型肖特基结结构 (SJS) 的性能评估，分为 SJS1 和 SJS2 器件。使用开发的基于 LabVIEW 的程序根据室温下 IV、CV 和 G/ω-V 测量的原始数据计算电子参数。根据热电子发射（TE）理论，石墨烯-PVP 层比其他结构显着改变了势垒高度。根据SJS1型器件，利用欧姆定律发现SJS2的R8h幅度增大，而R8幅度减小。或者，为了结果的准确性和可靠性，使用 Cheung 函数和修正的 Norde 函数，两个方程获得的 n、φBo、R8 值非常一致。利用C-2-V和G/ω-V特性，计算器件的电子参数的大小，例如φBo(CV)、Vbi、VD、ND、EF、R8等，以提供更多信息。此外，在3V下计算出Ci和Cox的大小为1.299×10-10F和1.192×10-10F，然后，SJS1和SJS2的界面层厚度分别为2.08nm和68.8nm。可以得出结论，石墨烯-PVP层显着影响Au/n-Si型SJS器件的质量和性能。