A strain-assisted model for studying the annealing induced interdiffusion of constituent atoms in truncated pyramidal InAs/GaAs self-assembled quantum dot (QD) is developed. In our model, we have considered the equiprobable diffusion of Ga and In atoms in and out of the QD system, thereby resulting in the formation of In rich In1-xGaxAs as the QD material and a combination of Ga rich InxGa1-xAs and GaAs barrier material. This assumption is supported by the high-resolution cross-sectional transmission electron microscopy (HRTEM) images and high-resolution X-ray diffraction (HRXRD) plots of the as-grown and annealed samples. First principle calculations are utilized to evaluate the strain and annealing temperature dependent activation energy, which further assists to solve the Fickian diffusion model. Our simplistic model provides a detailed insight into the effect of annealing phenomenon on the bimodal Photoluminescence (PL) spectra of molecular beam epitaxy (MBE) grown InAs/GaAs QDs, which have evolved as a potential system for innumerous applications including single photon sources, quantum computers, spin LEDs, LASERs and Infrared Photodetectors.

中文翻译：

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一种研究退火引起的 In 和 Ga 相互扩散的截锥形 InAs/GaAs 量子点的分析方法

开发了一种应变辅助模型，用于研究截锥形 InAs/GaAs 自组装量子点 (QD) 中成分原子的退火诱导相互扩散。在我们的模型中，我们考虑了 Ga 和 In 原子进出 QD 系统的等概率扩散，从而导致形成富 In In1-xGaxAs 作为 QD 材料以及富 Ga InxGa1-xAs 和 GaAs 势垒的组合材料。这一假设得到了生长和退火样品的高分辨率横截面透射电子显微镜 (HRTEM) 图像和高分辨率 X 射线衍射 (HRXRD) 图的支持。利用第一原理计算来评估应变和退火温度相关的活化能，这进一步有助于求解 Fickian 扩散模型。