We report short wavelength infrared (SWIR) photodetectors using multi-stacked modulation doped Indium-Arsenide (InAs) self-assembled quantum dots (QDs). The detriments of direct doping on the energy levels of InAs QDs have been eliminated by choosing modulation doping. We have considered three P-I-P Indium Arsenide/Gallium Arsenide (InAs/GaAs) quantum dot infrared photodetector (QDIP) heterostructures in which a thin (3 nm) P-doped GaAs layer is introduced at a distance of 7, 12 and 17 nm away from each InAs dot layer respectively. The structures have been analyzed for their morphological and optical characteristics and an optimum separation between the active layer and modulation doped layer has been achieved. The fabricated single pixel detectors exhibit a broad spectral response from 1 to 3.5 μm in the SWIR region for all the samples. The infrared photocurrent survives up to a maximum temperature of 200K for the optimized device with a peak responsivity of 1.439 A/W at wavelength λ = 1.77 μm and temperature T = 200 K.

中文翻译：

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PIP QDIP 中调制掺杂的空间优化：实现更高的工作温度

我们报告了使用多堆叠调制掺杂砷化铟 (InAs) 自组装量子点 (QD) 的短波长红外 (SWIR) 光电探测器。通过选择调制掺杂，已经消除了直接掺杂对 InAs QD 能级的不利影响。我们已经考虑了三种 PIP 砷化铟/砷化镓 (InAs/GaAs) 量子点红外光电探测器 (QDIP) 异质结构，其中在距离 7、12 和 17 nm 处引入了薄 (3 nm) P 掺杂的 GaAs 层。每个 InAs 点层。已经对这些结构的形态和光学特性进行了分析，并且已经实现了有源层和调制掺杂层之间的最佳分离。对于所有样品，制造的单像素探测器在 SWIR 区域表现出 1 到 3.5 μm 的宽光谱响应。